Germany – Miscellaneous general and special-purpose machinery – MBE System - Multi-150-mm Molecular Beam Epitaxy System - PR1208516-2050-W
MBE System - Multi-150-mm Molecular Beam Epitaxy System A multi-150 mm molecular beam epitaxy system is to be procured for the growth of antimonide and arsenide III-V semiconductor layers. The new system is intended, on the one hand
Opportunity description
MBE System - Multi-150-mm Molecular Beam Epitaxy System A multi-150 mm molecular beam epitaxy system is to be procured for the growth of antimonide and arsenide III-V semiconductor layers. The new system is intended, on the one hand, to achieve a higher quality of the layers, and layers with higher purity and a lower defect density are to be produced. The system must be capable of simultaneously depositing epitaxial heterostructures on several 150 mm wafers. The system must be equipped with retractable aluminum cells that allow the aluminum to remain molten under UHV conditions during maintenance. This is intended to increase the purity of the layers in the future. Procedure: neg-wo-call. Review the original TED notice for the complete requirement, lots, amendments and attachments.
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